ASDESE: Application specific design for ESD and substrate effects
Due to decreasing feature sizes, growing complexity, and higher operating frequencies in successive integrated circuit generations, electrostatic discharge (ESD) and substrate coupling are becoming increasingly problematic. Eliminating these effects can be very costly and time-consuming if their influence is only detected after the first wafers have been processed. This project is therefore developing methodologies to simulate the influence of ESD and substrate effects during the design phase. Designers will be able to apply the necessary corrections or integrate protective measures at this stage instead of redesigning the circuits after a costly silicon learning cycle. This will make chips inherently more reliable and robust, and make it possible to reduce the time-to-market for new developments.
Project coordination:Robert Bosch GmbH Project partners:
Funding initial:BMBF F&E 01M3053 Runtime:Thu, 01 March 2001 - Mon, 30 June 2003 Website: | Project InformationFinal Report |
Used Abbreviations
Abbreviation | Meaning |
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PR | Project Report |
SPR | Short Project Report |
PN | Project News |
FPR | Final Project Report |